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HFT1N60S N-Channel MOSFET

HFT1N60S Description

HFT1N60S Dec 2009 HFT1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.2 A .

HFT1N60S Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 3.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Teste

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Datasheet Details

Part number
HFT1N60S
Manufacturer
SemiHow
File Size
305.01 KB
Datasheet
HFT1N60S-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
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