HFT1N60S - N-Channel MOSFET

SemiHow

Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested SOT-223 2 3 1 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain C.

📁 HFT1N60S Similar Datasheet

HFT150-28 - NPN SILICON RF POWER TRANSISTOR (ASI)
HFT150-50 - N-Channel Enhancement Mode HF POWER MOSFET (ASI)
HFT012 - 12-bit SAR type Analog-to-Digital converter (Kingbright Corporation)
HFTC-16 - Ceramic High Pass Filter (Mini-Circuits)
HFTC-19 - Ceramic High Pass Filter (Mini-Circuits)
HFTC-26 - Ceramic High Pass Filter (Mini-Circuits)
HFTC-39 - Ceramic High Pass Filter (Mini-Circuits)
HFTC-9R5 - Ceramic High Pass Filter (Mini-Circuits)

Other Datasheets by SemiHow

Published: Mar 26, 2016 |