AT49BV6416C
ATMEL Corporation
520.23kb
Flash memory. The AT49BV6416C(T) is a 2.7-volt 64-megabit Flash memory. The memory is divided into multiple sectors and planes for erase operations
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AT49BV6416 - Flash Memory
(ATMEL Corporation)
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Features
• 64-megabit (4M x 16) Flash Memory • 2.7V - 3.6V Read/Write • High Performance
– Asynchronous Access Time – 70 ns – Pag.
AT49BV6416CT - Flash Memory
(ATMEL Corporation)
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Features
• 64-megabit (4M x 16) Flash Memory • 2.7V - 3.6V Read/Write • High Performance
– Asynchronous Access Time – 70 ns – Pag.
AT49BV6416T - Flash Memory
(ATMEL Corporation)
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Features
• 64-megabit (4M x 16) Flash Memory • 2.7V - 3.6V Read/Write • High Performance
– Asynchronous Access Time – 70 ns – Pag.
AT49BV640D - 64-megabit (4M x 16) 3-volt Only Flash Memory
(ATMEL Corporation)
Features
.. • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture
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AT49BV640DT - 64-megabit (4M x 16) 3-volt Only Flash Memory
(ATMEL Corporation)
Features
.. • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture
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AT49BV640S - 64-megabit (4M x 16) Secure 3-volt Only Memory
(ATMEL Corporation)
Features
.. • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture
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AT49BV640ST - 64-megabit (4M x 16) Secure 3-volt Only Memory
(ATMEL Corporation)
Features
.. • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture
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AT49BV642D - 64-megabit (4M x 16) 3-volt Only Flash Memory
(ATMEL Corporation)
Features
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.. Single Voltage Operation Read/Write: 2.65V - 3.6V 2.7V - 3.6V Read/Write Access Time – 70 ns Sector Erase Archite.
AT49BV642DT - 64-megabit (4M x 16) 3-volt Only Flash Memory
(ATMEL Corporation)
Features
• • • •
.. Single Voltage Operation Read/Write: 2.65V - 3.6V 2.7V - 3.6V Read/Write Access Time – 70 ns Sector Erase Archite.
AT49BV001 - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
(ATMEL)
Features
• Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •.