Description
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The AT49BV6416(T) is a 2.
Features
* 64-megabit (4M x 16) Flash Memory
* 2.7V - 3.6V Read/Write
* High Performance
* Asynchronous Access Time
* 70 ns
* Page Mode Read Time
* 20 ns Sector Erase Architecture
* Eight 4K Word Sectors with Individual Write Lockout
* O
Applications
* When RESET is at a logic high level, the device is in its standard operating mode. A low level on the RESET pin halts the present device operation and puts the outputs of the device in a high-impedance state. When a high level is reasserted on the RESET pin, the device returns to read or standby mo
