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SBT5551 NPN Silicon Transistor

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Description

Semiconductor SBT5551 NPN Silicon Transistor .
General purpose amplifier. High voltage application Features. high collector breakdown voltage : VCBO = 180V, VCEO = 160.

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Datasheet Specifications

Part number
SBT5551
Manufacturer
AUK corp
File Size
191.98 KB
Datasheet
SBT5551_AUKcorp.pdf
Description
NPN Silicon Transistor

Features

* high collector breakdown voltage : VCBO = 180V, VCEO = 160V
* Low collector saturation voltage : VCE(sat)=0.5V(MAX. )
* Complementary pair with SBT5401 Ordering Information Type NO. SBT5551 Marking FNF Package Code SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 1

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