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THN6301 SiGe NPN Transistor

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Description

Semiconductor * Application LNA and wide band amplifier up to GHz range * .
Base Emitter Collector. Available Package Product Package THN6301S SOT-23 THN6301U SOT-323 THN6301Z SOT-343 THN6301E SOT-523 THN6301K.

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Datasheet Specifications

Part number
THN6301
Manufacturer
AUK
File Size
217.59 KB
Datasheet
THN6301-AUK.pdf
Description
SiGe NPN Transistor

Features

* o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA THN6301 Series SiGe NPN Transistor SOT-523 Unit in mm
* hFE Classification Marking AA1 AA2

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