Description
Base Emitter
Collector
Available Package
Product
Package
THN6301S SOT-23
THN6301U SOT-323
THN6301Z SOT-343
THN6301E SOT-523
THN6301KF SOT-623F
Unit : mm
Dimension 2.9ⅹ1.3, 1.2t 2.0ⅹ1.25, 1.0t 2.
Features
- s
o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA
o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA
o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA
THN6301 Series
SiGe NPN Transistor
SOT-523
Unit in mm.
- hFE Classification
Marking AA1
AA2
hFE 125 to 300 80 to 160.
- Absolute Maximum Ratings
Symbol
Parameter
VCBO Collector to Base Breakdown Voltage
VCEO Collector to Emitter Breakdown Voltage
VEBO Emitter to Base Breakdown.
THN6301-AUK.pdf
