THN6301 Datasheet (AUK) - SiGe NPN Transistor

THN6301, SiGe NPN Transistor

Base Emitter Collector * Available Package Product Package THN6301S SOT-23 THN6301U SOT-323 THN6301Z SOT-343 THN6301E SOT-523 THN6301KF SOT-623F Unit : mm Dimension 2.9ⅹ1.3, 1.2t 2.0ⅹ1.25, 1.0t 2.

THN6301 Features

* o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA THN6301 Series SiGe NPN Transistor SOT-523 Unit in mm

* hFE Classification Marking AA1 AA2