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THN6501 SiGe NPN Transistor

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Description

Semiconductor * Application LNA and wide band amplifier up to GHz range * .
Base Emitter Collector. Available Package Product Package THN6501S SOT-23 THN6501U SOT-323 THN6501Z SOT-343 THN6501E SOT-523 Unit : m.

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Datasheet Specifications

Part number
THN6501
Manufacturer
AUK
File Size
226.74 KB
Datasheet
THN6501-AUK.pdf
Description
SiGe NPN Transistor

Features

* o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Transition Frequency fT = 9 GHz at VCE = 3 V, IC = 30 mA THN6501 Series SiGe NPN Transistor SOT-523 Unit in mm
* hFE Classification Marking AB1 AB2

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