Description
Base Emitter
Collector
Available Package
Product
Package
THN6501S SOT-23
THN6501U SOT-323
THN6501Z SOT-343
THN6501E SOT-523
Unit : mm Dimension 2.9ⅹ1.3, 1.2t 2.0ⅹ1.25, 1.0t 2.0ⅹ1.25,
Features
- s
o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA
o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA
o High Transition Frequency fT = 9 GHz at VCE = 3 V, IC = 30 mA
THN6501 Series
SiGe NPN Transistor
SOT-523
Unit in mm.
- hFE Classification
Marking AB1
AB2
hFE 125 to 300 80 to 160.
- Absolute Maximum Ratings
Symbol
Parameter
VCBO Collector to Base Breakdown Voltage
VCEO Collector to Emitter Breakdown Voltage
VEBO Emitter to Base Breakdown.
THN6501-AUK.pdf
