THN6501 Datasheet (AUK) - SiGe NPN Transistor

THN6501, SiGe NPN Transistor

Base Emitter Collector * Available Package Product Package THN6501S SOT-23 THN6501U SOT-323 THN6501Z SOT-343 THN6501E SOT-523 Unit : mm Dimension 2.9ⅹ1.3, 1.2t 2.0ⅹ1.25, 1.0t 2.0ⅹ1.25,

THN6501 Features

* o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Transition Frequency fT = 9 GHz at VCE = 3 V, IC = 30 mA THN6501 Series SiGe NPN Transistor SOT-523 Unit in mm

* hFE Classification Marking AB1 AB2