THN6501F Datasheet, Transistor, AUK

THN6501F Features

• Transistor o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Gain MAG = 11.5 dB at f = 1 GHz, VCE = 10 V, IC = 20 mA o High Transition Frequency fT = 7 GHz at f = 1 GHz, VCE

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THN6501F

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AUK

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📄 Datasheet

Description:

Sige npn transistor. Base Collector Emitter

Absolute Maximum Ratings Symbol Parameter VCBO VCEO VEBO IC PT TSTG TJ Collector to Base Breakd

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THN6501F

AUK

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