THN6501F Datasheet (AUK) - SiGe NPN Transistor

THN6501F, SiGe NPN Transistor

Base Collector Emitter * Absolute Maximum Ratings Symbol Parameter VCBO VCEO VEBO IC PT TSTG TJ Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junct

THN6501F Features

* o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Gain MAG = 11.5 dB at f = 1 GHz, VCE = 10 V, IC = 20 mA o High Transition Frequency fT = 7 GHz at f = 1 GHz, VCE = 10 V, IC = 30 mA THN6501F SiGe NPN Transistor SOT-89 Unit in mm 4

* hFE Classification Marking AB