THN6501F

SiGe NPN Transistor

AUK

THN6501F Features

* o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Gain MAG = 11.5 dB at f = 1 GHz, VCE = 10 V, IC = 20 mA o High Transition Frequency fT = 7 GHz at f = 1 GHz, VCE = 10 V, IC = 30 mA THN6501F SiGe NPN Transistor SOT-89 Unit in mm 4

* hFE Classification Marking AB

THN6501F General Description

Base Collector Emitter

* Absolute Maximum Ratings Symbol Parameter VCBO VCEO VEBO IC PT TSTG TJ Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junct.

THN6501F Datasheet (190.65 KB)

THN6501F Datasheet Preview — Preview of THN6501F PDF

Datasheet Details

Part number:

THN6501F

Manufacturer:

AUK

File Size:

190.65 KB

Description:

Sige npn transistor.

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THN6501F SiGe NPN Transistor AUK

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THN6501F Features

THN6501F General Description

Datasheet Details

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Description:

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