These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.
Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.
A nitride passivation layer provides immunity from contaminant
HSCH-5331 Features
* Platinum tri-metal system High temperature stability
* Silicon nitride passivation Stable, reliable performance
* Low noise figure Guaranteed 7.5 dB at 26 GHz
* High uniformity Tightly controlled process insures uniform RF characteristics
* Rugged constructi
Datasheet Details
HSCH-5331, HSCH-5314
AVAGO
75.53 KB
Beam lead schottky diodes.
This datasheet PDF includes multiple part numbers: HSCH-5331, HSCH-5314.
Please refer to the document for exact specifications by model.
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