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HSCH-5300, HSCH-5300_Hewlett Datasheet - Hewlett-Packard

HSCH-5300 - Beam Lead Schottky Diodes

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminant.

HSCH-5300 Features

* Platinum Tri-Metal System High Temperature Stability

* Silicon Nitride Passivation Stable, Reliable Performance

* Low Noise Figure Guaranteed 7.5 dB at 26 GHz

* High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics

* Rugged Constructi

HSCH-5300_Hewlett-Packard.pdf

This datasheet PDF includes multiple part numbers: HSCH-5300, HSCH-5300_Hewlett. Please refer to the document for exact specifications by model.
HSCH-5300 Datasheet Preview Page 2 HSCH-5300 Datasheet Preview Page 3

Datasheet Details

Part number:

HSCH-5300, HSCH-5300_Hewlett

Manufacturer:

Hewlett-Packard

File Size:

102.33 KB

Description:

Beam lead schottky diodes.

Note:

This datasheet PDF includes multiple part numbers: HSCH-5300, HSCH-5300_Hewlett.
Please refer to the document for exact specifications by model.

HSCH-5300 Distributor

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