HSCH-5318 Datasheet - Agilent

HSCH-5318 Beam Lead Schottky Diodes

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminant.

HSCH-5318 Features

* Platinum Tri-Metal System High Temperature Stability

* Silicon Nitride Passivation Stable, Reliable Performance

* Low Noise Figure Guaranteed 7.5 dB at 26 GHz

* High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics

* Rugged Constructi

HSCH-5318-Agilent.pdf