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HSCH-5312

Beam Lead Schottky Diodes

HSCH-5312 Features

* Platinum Tri-Metal System High Temperature Stability

* Silicon Nitride Passivation Stable, Reliable Performance

* Low Noise Figure Guaranteed 7.5 dB at 26 GHz

* High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics

* Rugged Constructi

HSCH-5312 General Description

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminant.

HSCH-5312 Datasheet (69.50 KB)

Preview of HSCH-5312 PDF

Datasheet Details

Part number:

HSCH-5312

Manufacturer:

Agilent

File Size:

69.50 KB

Description:

Beam lead schottky diodes.

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TAGS

HSCH-5312 Beam Lead Schottky Diodes Agilent

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