HSCH-9161 Datasheet - Keysight

HSCH-9161 GaAs Detector Diode

The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode (MBID) process. Absolute Maximum Ratings Symbol Top Tstg PB Parameters/conditions Operating temperature range Storage temperature range Burnout power Typ. Min. Max. Units *65 150 °.

HSCH-9161 Features

* Low junction capacitance

* fc > 200 GHz

* Lower temperature coefficient than silicon

* Durable construction Typical 6 gram beam lead strength High power handling capability 02 | Keysight | HSCH-9161 HSCH-9162 GaAs Detector Diode

* Data Sheet De

HSCH-9161-Keysight.pdf