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AP01L60AT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp.▼ Low Gate Charge ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G S D.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness.

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Datasheet Specifications

Part number
AP01L60AT
Manufacturer
Advanced Power Electronics
File Size
101.45 KB
Datasheet
AP01L60AT-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G TO-92 D S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 600 ± 30 160 100 300 0.83 -55 to 150 -55 to 150

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