AP01N40J Datasheet - Advanced Power Electronics

AP01N40J, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP01N40J RoHS-compliant Product Advanced Power Electronics Corp.▼ Lower Gate Charge ▼ 100% Avalanche Rated ▼ Fast Switching Performance ▼ Simple Dri.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost.

Applications

* G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 400 ±20 0.5 0.4 2 17.4 0.14 2 Units V

AP01N40J-AdvancedPowerElectronics.pdf