AP05N50H-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP05N50H-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100% Avalanche Tested Fast Switching Sp.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number: AP05N50H-3
Manufacturer: Advanced Power Electronics
File Size: 247.55 KB
Datasheet: AP05N50H-3-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID at TC =25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 500 ±20 5.0 2.8 18 73.5 0.59 2 Units V V

AP05N50H-3 Distributors

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AP05N50H-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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