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AP09N20BGS-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP09N20BGS-HF Halogen-Free Product Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristics ▼.
AP09N20B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching.

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Datasheet Specifications

Part number
AP09N20BGS-HF
Manufacturer
Advanced Power Electronics
File Size
86.92 KB
Datasheet
AP09N20BGS-HF_AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-263 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S TO-263(S) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃

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