AP09N50I Datasheet - Advanced Power Electronics

AP09N50I, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP09N50I RoHS-compliant Product Advanced Power Electronics Corp.▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost.

Applications

* G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 500 +30 9 5.6 36 36.8 2 Units V V A

AP09N50I_AdvancedPowerElectronics.pdf