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AP2302AGN-HF N-channel Enhancement-mode Power MOSFET

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Description

AP2302AGN-HF Halogen-Free Product Advanced Power Electronics Corp.▼ Capable of 2.5V gate drive ▼ Lower Gate Charge ▼ Surface mount package ▼ RoHS Co.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectivenes.

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Datasheet Specifications

Part number
AP2302AGN-HF
Manufacturer
Advanced Power Electronics
File Size
90.45 KB
Datasheet
AP2302AGN-HF-AdvancedPowerElectronics.pdf
Description
N-channel Enhancement-mode Power MOSFET

Applications

* G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 20 +8 4.6 3.7 20 1.38 -55 to 150 -55 to 150 Unit

AP2302AGN-HF Distributors

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📌 All Tags

N-channel Enhancement-mode Power MOSFET Advanced Power Electronics
Advanced Power Electronics AP2302AGN-HF-like datasheet