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AP2322GN-HF-3 - N-channel Enhancement mode Power MOSFET

AP2322GN-HF-3 Description

Advanced Power Electronics Corp.AP2322GN-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Supports 1.8V Gate Drive Surface Mou.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

AP2322GN-HF-3 Applications

* where a small board footprint is required. This device is well suited for use in medium current applications such as voltage conversion or switch applications. D S SOT-23 G Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Volt

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N-channel Enhancement mode Power MOSFET Advanced Power Electronics
Advanced Power Electronics AP2322GN-HF-3-like datasheet