AP2602GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP2602GY Pb Free Plating Product Advanced Power Electronics Corp.▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS C.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectivenes.

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Datasheet Specifications

Part number: AP2602GY
Manufacturer: Advanced Power Electronics
File Size: 57.70 KB
Datasheet: AP2602GY-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 Rating 20 ±12 6.3 5 30 2 0.016 -55 to 150 -55 to 15

AP2602GY Distributors

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AP2602GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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