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AP2603GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP2603GY Pb Free Plating Product Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device TSOP-6 D .
D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiven.

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Datasheet Specifications

Part number
AP2603GY
Manufacturer
Advanced Power Electronics
File Size
72.58 KB
Datasheet
AP2603GY-AdvancedPowerElectronics.pdf
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating -20 ±12 -5 -4 -20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃

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