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AP2603GY-HF-3 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power Electronics Corp.AP2603GY-HF-3 P-channel Enhancement-mode Power MOSFET Fast Switching Characteristics Low Gate Charge Small Footprin.
S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number
AP2603GY-HF-3
Manufacturer
Advanced Power Electronics
File Size
79.68 KB
Datasheet
AP2603GY-HF-3-AdvancedPowerElectronics.pdf
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* where space is at a premium. SOT-26 Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 ±12 -5 -4 -20 2 0.016 -55 t

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