AP2602Y N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP2602Y Advanced Power Electronics Corp.▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package SOT-26 D D D D G S N-CHANNEL ENH.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectivenes.

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Datasheet Specifications

Part number: AP2602Y
Manufacturer: Advanced Power Electronics
File Size: 71.06 KB
Datasheet: AP2602Y-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current 1,2 Rating 20 ±12 6.3 5 30 2 0.016 -55 to 150 -55 to 150 U

AP2602Y Distributors

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AP2602Y N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

Advanced Power Electronics AP2602Y-like datasheet