AP3303H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP3303H/J Advanced Power Electronics Corp.▼ Low Gate Charge ▼ Simple Drive Requirement www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET .
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC.

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Datasheet Specifications

Part number: AP3303H
Manufacturer: Advanced Power Electronics
File Size: 105.66 KB
Datasheet: AP3303H_AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3303J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate

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AP3303H N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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