AP80N03GP-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP80N03GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D BVDSS 30V ▼ Fas.
AP80N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switchin.

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Datasheet Specifications

Part number: AP80N03GP-HF
Manufacturer: Advanced Power Electronics
File Size: 77.74 KB
Datasheet: AP80N03GP-HF-AdvancedPowerElectronics.pdf
Description: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Applications

* G DS TO-220(P) The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP80N03P) are available for low-profile appli

AP80N03GP-HF Distributors

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AP80N03GP-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics

Advanced Power Electronics AP80N03GP-HF-like datasheet