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AP80N03S N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power Electronics Corp.AP80N03S N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Fast Switching ▼ Simple Drive Requirement De.
G D S TO-263 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on.

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Datasheet Specifications

Part number
AP80N03S
Manufacturer
Advanced Power Electronics
File Size
78.69 KB
Datasheet
AP80N03S-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP80N03P) is available for low-profile applications. BVDSS RDS(ON) ID 30V 8mΩ 80A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-S

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