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AP9465BGJ, AP9465BGH N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9465BGJ Description

AP9465BGH/J RoHS-compliant Product Advanced Power Electronics Corp.▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G .
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

AP9465BGJ Applications

* and suited for low voltage applications. The through-hole version (AP9465BGJ) are available for low-profile applications. G
* D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source V

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This datasheet PDF includes multiple part numbers: AP9465BGJ, AP9465BGH. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AP9465BGJ, AP9465BGH
Manufacturer
Advanced Power Electronics
File Size
93.71 KB
Datasheet
AP9465BGH-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Note
This datasheet PDF includes multiple part numbers: AP9465BGJ, AP9465BGH.
Please refer to the document for exact specifications by model.

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📌 All Tags

N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP9465BGJ-like datasheet