AP9479GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP9479GM Pb Free Plating Product Advanced Power Electronics Corp.▼ Simple Drive Requirement D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON.
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and.

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Datasheet Specifications

Part number: AP9479GM
Manufacturer: Advanced Power Electronics
File Size: 105.05 KB
Datasheet: AP9479GM_AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 60 ±25

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AP9479GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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