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AP9575AGJ, AP9575AGH P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9575AGJ Description

Advanced Power Electronics Corp.AP9575AGH/J RoHS-compliant Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Higher Gate-Source Voltage D ▼ Simpl.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC con.

AP9575AGJ Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9575AGJ) are available for low-profile applications. BVDSS RDS(ON) ID -60V 64mΩ -17A GD S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: AP9575AGJ, AP9575AGH. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AP9575AGJ, AP9575AGH
Manufacturer
Advanced Power Electronics
File Size
93.37 KB
Datasheet
AP9575AGH-AdvancedPowerElectronics.pdf
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Note
This datasheet PDF includes multiple part numbers: AP9575AGJ, AP9575AGH.
Please refer to the document for exact specifications by model.

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📌 All Tags

P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP9575AGJ-like datasheet