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AP9T18GEJ, AP9T18GEH N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP9T18GEH/J Pb Free Plating Product Advanced Power Electronics Corp.▼ G-S Diode embedded ▼ Capable of 2.5V gate drive ▼ Surface mount package ▼ RoHS.
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistan.

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This datasheet PDF includes multiple part numbers: AP9T18GEJ, AP9T18GEH. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AP9T18GEJ, AP9T18GEH
Manufacturer
Advanced Power Electronics
File Size
133.02 KB
Datasheet
AP9T18GEH-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Note
This datasheet PDF includes multiple part numbers: AP9T18GEJ, AP9T18GEH.
Please refer to the document for exact specifications by model.

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