2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology

2N2857 Description

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Fea.
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2N2857 Applications

* include low noise amplifier; oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) Symbol Parameter Value Unit VCEO VCBO VEBO PD IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Maximum Device Dissipation Collector Current 15 30 2.5 200 40 V V V m

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Datasheet Details

Part number: 2N2857
Manufacturer: Advanced Power Technology
File Size: 120.91 KB
Datasheet: 2N2857_AdvancedPowerTechnology.pdf
Description: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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MICROWAVE DISCRETE LOW POWER TRANSISTORS Advanced Power Technology

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