2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology

Description

2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS .
Silicon NPN transistor, designed for VHF and UHF equipment.

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Datasheet Specifications

Part number: 2N4427
Manufacturer: Advanced Power Technology
File Size: 364.81 KB
Datasheet: 2N4427_AdvancedPowerTechnology.pdf
Description: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Features

* Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA Power Gain, GPE = 10dB (Min) @ 175 MHz TO-39 1. Emitter 2. Base 3. Collector www. DataSheet4U. com

Applications

* include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 2.0 400 U

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2N4427 MICROWAVE DISCRETE LOW POWER TRANSISTORS Advanced Power Technology

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