2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology

2N5031 Description

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Fea.
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2N5031 Features

* Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain

2N5031 Applications

* targeted for military and industrial equipment. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 15 3.0 20 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA =

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Datasheet Details

Part number: 2N5031
Manufacturer: Advanced Power Technology
File Size: 125.59 KB
Datasheet: 2N5031_AdvancedPowerTechnology.pdf
Description: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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MICROWAVE DISCRETE LOW POWER TRANSISTORS Advanced Power Technology

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