2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology

2N5179 Description

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Fea.
www.

2N5179 Applications

* ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 12 20 2.5 50 Unit Vdc Vdc Vdc mA Thermal Data PD Total Device Dissipation @ TA = 25ºC Derate above 25ºC 300 1.71 mW mW/ ºC

📥 Download Datasheet

2N5179 Datasheet Preview — Preview of 2N5179 PDF

Datasheet Details

Part number: 2N5179
Manufacturer: Advanced Power Technology
File Size: 191.93 KB
Datasheet: 2N5179_AdvancedPowerTechnology.pdf
Description: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

📁 Related Datasheet

2N5170 - SILICON CONTROLLED RECTIFIERS (Motorola Inc)
2N5170R - THYRISTORS (ETC)
2N5171 - SILICON CONTROLLED RECTIFIERS (Motorola Inc)
2N5171R - THYRISTORS (ETC)
2N5172 - NPN General Purpose Amplifier (Fairchild Semiconductor)
2N5177 - Silicon NPN High Power UHF Transistor (Great American Electronics)
2N5102 - RF Power Devices (RCA Solid State)
2N5108 - NPN SILICON HIGH FREQUENCY TRANSISTOR (Advanced Semiconductor)

📌 All Tags

MICROWAVE DISCRETE LOW POWER TRANSISTORS Advanced Power Technology

Advanced Power Technology 2N5179-like datasheet

2N5109 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
2N5031 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS