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2N5109 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

The 2N5109 by Advanced Power Technology is a RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS. Below is the official datasheet preview.

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Official preview page of the 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS datasheet (Advanced Power Technology).

Datasheet Details

Part number 2N5109
Manufacturer Advanced Power Technology
File Size 303.27 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet download datasheet 2N5109_AdvancedPowerTechnology.pdf
Additional preview pages of the 2N5109 datasheet.

2N5109 Product details

Description

www.DataSheet4U.com The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment.Applications include amplifier; pre-driver, driver, and output stages.It is also suitable for oscillator and frequency-multiplier functions.ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 3.0 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75º C

Features

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