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AP4936M - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP4936M
Manufacturer Advanced Power Technology
File Size 115.86 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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    www.DataSheet4U.com AP4936M Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement D1 D2 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G2 S2 25V 37mΩ 5.8A ▼ Fast Switching SO-8 G1 S1 Description D1 D2 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 25 ± 20 5.8 4.6 30 2 0.
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