APT200GN60JDQ4
Advanced Power Technology
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APT200GN60J - Intergrated Gate Resistor: Low EMI High Reliability
(Advanced Power Technology)
TYPICAL PERFORMANCE CURVES
APT200GN60J APT200GN60J
..
600V
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT.
APT200GN60B2G - Field Stop IGBT
(Microsemi Corporation)
.. APT200GN60B2G
600V, VCE(ON) = 1.45V Typical
Field Stop IGBT
Utilizing the latest Field Stop and Trench Gate technologies, these .
APT200GT60JR - Thunderbolt IGBT
(Microsemi Corporation)
.. APT200GT60JR
600V, 200A, VCE(ON) = 2.1V Typical
Thunderbolt IGBT®
The Thunderbolt IGBT® is a new generation of high voltage powe.
APT200GT60JRDL - Resonant Mode Combi IGBT
(Microsemi Corporation)
TYPICAL PERFORMANCE CURVES
APT200GT60JRDL
600V, 200A, VCE(ON) = 2.0V Typical
..
APT200GT60JRDL
Resonant Mode Combi IGBT®
The Thund.
APT200GT60JRDQ4 - Thunderbolt IGBT
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.. APT200GT60JRDQ4
600V, 200A, VCE(ON) = 2.0V Typical
Thunderbolt IGBT®
The Thunderbolt IGBT® is a new generation of high voltage p.
APT2012EC - SMD Chip LED Lamp
(Kingbright)
APT2012EC
2.0 x 1.25 mm SMD Chip LED Lamp
DESCRIPTION
The High Efficiency Red source color devices are Made with Gallium Arsenide Phosphide on Gallium.
APT2012F3C - Infrared Emitting Diode
(Kingbright)
APT2012F3C 2.0x1.25mm Infrared Emitting Diode
DESCRIPTIONS
F3 Made with Gallium Arsenide Infrared Emitting diodes
FEATURES
2.0 mm x 1.25 mm SMD LED, .
APT2012MGC - Straight 1-Row BergStik II Headers
(Kingbright Corporation)
2.0x1.25mm SMD CHIP LED LAMP
APT2012MGC
MEGA GREEN
Features
2.0mmx1.25mm SMT LED,0.75mm THICKNESS. LOW POWER CONSUMPTION. WIDE VIEWING ANGLE. IDEAL.
APT2012P3BT - PHOTOTRANSISTOR
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2.0x1.25mm PHOTOTRANSISTOR
Part Number: APT2012P3BT
Features
z 2.0mmx1.25mm SMD LED,0.75mm thickness. z Mechanically and spectrally matched to infrar.
APT2012QGW - Straight 1-Row BergStik II Headers
(Kingbright Electronic)
m o .c U 4 t e e h Features S a t a D . w w w
LOW POWER CONSUMPTION. WIDE VIEWING ANGLE. PACKAGE
2.0x1.2mm SMD CHIP LED LAMP
APT2012QGW GREEN
Des.