APT6030BN
Advanced Power Technology
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N-channel mosfet.
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APT6030BVFR - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: .
APT6030BVFR - Power MOSFET
(Advanced Power Technology)
APT6030BVFR
600V 21A 0.300W
POWER MOS V ®
FREDFET
TO-247
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs..
APT6030BVR - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: .
APT6030BVR - Power MOSFET
(Advanced Power Technology)
APT6030BVR APT6030SVR
600V 21A 0.300Ω
POWER MOS V® MOSFET
BVR
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOS.
APT6030SVR - Power MOSFET
(Advanced Power Technology)
APT6030BVR APT6030SVR
600V 21A 0.300Ω
POWER MOS V® MOSFET
BVR
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOS.
APT6032AVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
(Advanced Power Technology)
APT6032AVR
600V 17.5A 0.320Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno.
APT6033BN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
(Advanced Power Technology)
D
TO-247
G S
APT6030BN 600V
®
23.0A 0.30Ω 22.0A 0.33Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Vol.
APT6035AVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
(Advanced Power Technology)
APT6035AVR
600V 16A 0.350Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technolo.
APT6035BN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
(Advanced Power Technology)
D
TO-247
G S
APT6035BN 600V
19.0A 0.35Ω
POWER MOS IV ®
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol VDSS ID IDM .
APT6035BVR - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: .