APT6030BVFR Datasheet, Mosfet, INCHANGE

APT6030BVFR Features

• Mosfet
• Drain Current
    –ID=21A@ TC=25℃
• Drain Source Voltage- : VDSS=600V(Min)
• Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max)
• 100% aval

PDF File Details

Part number:

APT6030BVFR

Manufacturer:

INCHANGE

File Size:

371.49kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

APT6030BVFR Application

• Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Contin

TAGS

APT6030BVFR

INCHANGE

📁 Related Datasheet

APT6030BVFR - Power MOSFET (Advanced Power Technology)
APT6030BVFR 600V 21A 0.300W POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs..

APT6030BVR - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : .

APT6030BVR - Power MOSFET (Advanced Power Technology)
APT6030BVR APT6030SVR 600V 21A 0.300Ω POWER MOS V® MOSFET BVR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOS.

APT6030BN - N-Channel MOSFET (Advanced Power Technology)
D TO-247 G S APT6030BN 600V ® 23.0A 0.30Ω 22.0A 0.33Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Vol.

APT6030SVR - Power MOSFET (Advanced Power Technology)
APT6030BVR APT6030SVR 600V 21A 0.300Ω POWER MOS V® MOSFET BVR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOS.

APT6032AVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
APT6032AVR 600V 17.5A 0.320Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno.

APT6033BN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS (Advanced Power Technology)
D TO-247 G S APT6030BN 600V ® 23.0A 0.30Ω 22.0A 0.33Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Vol.

APT6035AVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
APT6035AVR 600V 16A 0.350Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technolo.

APT6035BN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS (Advanced Power Technology)
D TO-247 G S APT6035BN 600V 19.0A 0.35Ω POWER MOS IV ® N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID IDM .

APT6035BVR - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : .