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APT6035BN Datasheet - Advanced Power Technology

APT6035BN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D TO-247 G S APT6035BN 600V 19.0A 0.35Ω POWER MOS IV ® N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 All Ratings: TC = 25°C unless otherwise specified. APT6035BN UNIT.

APT6035BN Datasheet (49.58 KB)

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Datasheet Details

Part number:

APT6035BN

Manufacturer:

Advanced Power Technology

File Size:

49.58 KB

Description:

N-channel enhancement mode high voltage power mosfets.

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APT6035BN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Advanced Power Technology

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