* Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration G2 G4
APTM120H29F Datasheet (335.06 KB)
APTM120H29F
Advanced Power Technology
335.06 KB
Mosfet power module.
APTM120H29F Full - Bridge MOSFET Power Module VB US Q1 Q3 VDSS = 1200V RDSon = 290mΩ max @ Tj = 25°C ID = 34A @ Tc = 25°C Application <.
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