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APTM100A13DG MOSFET Power Module

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Description

APTM100A13DG Phase leg with Series diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C VBUS G1 S1 OUT G2 0.

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Features

* Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged
* Kelvin source for easy drive
* Very low stray inductance - Symmetrical design - M5 power connectors
* High l

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MOSFET Power Module Microsemi
Microsemi APTM100A13DG-like datasheet