APTM100AM90F Datasheet, Module, Advanced Power Technology

APTM100AM90F Features

• Module
• Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for

PDF File Details

Part number:

APTM100AM90F

Manufacturer:

Advanced Power Technology

File Size:

329.40kb

Download:

📄 Datasheet

Description:

Mosfet power module.

TAGS

APTM100AM90F

Advanced Power Technology

📁 Related Datasheet

APTM100AM90FG - MOSFET Power Module (Microsemi)
APTM100AM90FG Phase leg MOSFET Power Module VDSS = 1000V RDSon = 90mΩ typ @ Tj = 25°C ID = 78A @ Tc = 25°C VB US Q1 G1 OUT S1 Q2 G2 S2 0/VBUS G1 V.

APTM100A13D - MOSFET Power Module (Advanced Power Technology)
APTM100A13D Phase leg with Series diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ max @ Tj = 25°C ID = 65A @ Tc = 25°C Application • Zero Curren.

APTM100A13DG - MOSFET Power Module (Microsemi)
APTM100A13DG Phase leg with Series diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C VBUS G1 S1 OUT G2 0.

APTM100A13SCG - MOSFET Power Module (Microsemi)
APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C VBUS Q1 G1.

APTM100A13SG - MOSFET Power Module (Microsemi)
APTM100A13SG Phase leg Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C VBUS Q1 G1 OUT .

APTM100A18FTG - MOSFET Power Module (Microsemi)
APTM100A18FTG Phase leg MOSFET Power Module VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C VBUS NT C2 Q1 G1 S1 Q2 OUT G2 S2 0.

APTM100A18FTG - MOSFET Power Module (Advanced Power Technology)
APTM100A18FTG Phase leg MOSFET Power Module VBUS Q1 NT C2 VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C Application • Welding conve.

APTM100A23SCTG - MOSFET Power Module (Microsemi)
APTM100A23SCTG Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 230mΩ typ @ Tj = 25°C ID = 36A @ Tc = 25°C VBUS NT .

APTM100A23STG - MOSFET Power Module (Microsemi)
APTM100A23STG Phase leg Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 230mΩ typ @ Tj = 25°C ID = 36A @ Tc = 25°C Q1 G1 S1 Q2 G2.

APTM100A40FT1G - MOSFET Power Module (Microsemi)
APTM100A40FT1G Phase leg MOSFET Power Module VDSS = 1000V RDSon = 400m typ @ Tj = 25°C ID = 21A @ Tc = 25°C 56 11 Q1 7 8 Q2 3 4 NTC 9 10 12 .