* Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
* Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient
APTM100A13SCG Datasheet (279.85 KB)
APTM100A13SCG
279.85 KB
Mosfet power module.
APTM100A13SCG
Phase leg
Series & SiC parallel diodes
MOSFET Power Module
VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C
VBUS
Q1 G1.
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