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BFY90

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

BFY90 Features

* Silicon NPN, To-72 packaged VHF/UHF Transistor

* Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA,

* 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC

* Power Gain, GPE = 19 dB (typ) @ 200 MHz BFY90 2 13 4 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION:

BFY90 General Description

Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector .

BFY90 Datasheet (108.88 KB)

Preview of BFY90 PDF

Datasheet Details

Part number:

BFY90

Manufacturer:

Advanced Power Technology

File Size:

108.88 KB

Description:

Rf & microwave discrete low power transistors.

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TAGS

BFY90 MICROWAVE DISCRETE LOW POWER TRANSISTORS Advanced Power Technology

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