* High Gain
* Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA
* Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz
* High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz
* State
* of
* the
* Art Technology Fine Line Geometry Ion
* Implanted Arsenic Emitte
MMBR911LT1G Datasheet (144.36 KB)
MMBR911LT1G
Advanced Power Technology
144.36 KB
Npn silicon high-frequency transistor.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR DESCRIPTI.
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