MMBR911LT1G, MMBR911LT1 Datasheet - Advanced Power Technology

MMBR911LT1G NPN SILICON HIGH-FREQUENCY TRANSISTOR

Designed for low noise, wide dynamic range front *end amplifiers and low *noise VCO’s. Available in a surface *mountable plastic package. This small *signal plastic transistor offers superior quality and performance at low cost. MMBR911LT1 MMBR911LT1G * G Denotes Ro.

MMBR911LT1G Features

* High Gain

* Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA

* Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz

* High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz

* State

* of

* the

* Art Technology Fine Line Geometry Ion

* Implanted Arsenic Emitte

MMBR911LT1-AdvancedPowerTechnology.pdf

MMBR911LT1G Datasheet Preview — This datasheet PDF includes multiple part numbers: MMBR911LT1G, MMBR911LT1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MMBR911LT1G, MMBR911LT1

Manufacturer:

Advanced Power Technology

File Size:

144.36 KB

Description:

Npn silicon high-frequency transistor.

Note:

This datasheet PDF includes multiple part numbers: MMBR911LT1G, MMBR911LT1.
Please refer to the document for exact specifications by model.

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MMBR911LT1G MMBR911LT1 NPN SILICON HIGH-FREQUENCY TRANSISTOR Advanced Power Technology

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