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MMBR901L Datasheet - Inchange Semiconductor

MMBR901L Silicon NPN RF Transistor

*Low Noise *High Power Gain- Gpe = 12.0 dB TYP. @ f = 1 GHz APPLICATIONS *Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Em.

MMBR901L-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

MMBR901L

Manufacturer:

Inchange Semiconductor

File Size:

95.90 KB

Description:

Silicon npn rf transistor.

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MMBR901L MMBR901L Silicon NPN Transistor Inchange Semiconductor

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