MMBR901L - Silicon NPN RF Transistor
*Low Noise *High Power Gain- Gpe = 12.0 dB TYP.
@ f = 1 GHz APPLICATIONS *Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Em
