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MMBR901L Silicon NPN RF Transistor

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Description

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR901L .
Low Noise. High Power Gain- Gpe = 12. Designed for use in high gain ,low noise , small signal amplifie.

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Datasheet Specifications

Part number
MMBR901L
Manufacturer
Inchange Semiconductor
File Size
95.90 KB
Datasheet
MMBR901L-InchangeSemiconductor.pdf
Description
Silicon NPN RF Transistor

Applications

* Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage IC Collector Current-Continuous

MMBR901L Distributors

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Silicon NPN Transistor Inchange Semiconductor
Inchange Semiconductor MMBR901L-like datasheet