MMBR920L Silicon NPN RF Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR920L .
Low Noise NF= 2. High Gain Gpe= 15dB TYP. Designed for thick and thin-film circuits using.

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Datasheet Specifications

Part number: MMBR920L
Manufacturer: Inchange Semiconductor
File Size: 95.24 KB
Datasheet: MMBR920L-InchangeSemiconductor.pdf
Description: Silicon NPN RF Transistor

Applications

* Designed for thick and thin-film circuits using surface mount components and requiring low-noise , high-gain signal amplification at frequencies to 1 GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V

MMBR920L Distributors

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MMBR920L Silicon NPN Transistor Inchange Semiconductor

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