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MMBR911MLT1 RF & MICROWAVE TRANSISTORS

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Description

WWW.Microsemi .COM PRELIMINARY RF PRODUCTS DIVISION MMBR911MLT1 RF & MICROWAVE TRANSISTORS .
The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.

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Features

* ! High FTau-6.0 GHz ! Low noise-2.9dB@1GHz ! Low cost SOT23 package Symbol VCBO VCEO VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Parameter Value Collector-Base Voltage 20 Collector-Emitter Voltage 12 Emitter-Base Voltage 2.0 Device Current 60 Power Dissipation 333 Ju

Applications

* BENEFITS ! LNA, Oscillator, Pre-Driver SOT-23 MMBR911MLT1 Symbol BVCBO BVCEO ICBO hFE STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C) Test IC = .1mA IC =1.0mA VCB =15V VCE =10V Conditions IE = 0 IB = 0 IE =

MMBR911MLT1 Distributors

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📌 All Tags

MMBR911MLT1 MICROWAVE TRANSISTORS Microsemi
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