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MMBR5179LT1 RF & MICROWAVE TRANSISTORS

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Description

WWW.Microsemi .COM PRELIMINARY RF PRODUCTS DIVISION MMBR5179LT1 RF & MICROWAVE TRANSISTORS .
The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.

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Features

* ! High FTau-1.4GHz ! Low noise-4.5dB@200MHz ! Low cost SOT23 package Symbol VCBO VCEO VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Parameter Value Collector-Base Voltage 20 Collector-Emitter Voltage 12 Emitter-Base Voltage 2.5 Device Current 50 Power Dissipation 375 J

Applications

* BENEFITS ! LNA, Oscillator, Pre-Driver SOT-23 MMBR5179LT1 Symbol BVCBO BVCEO ICBO hFE STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C) Test IC = .01mA IC =3mA VEB = 15V VCB = 1 V Conditions IE = 0 IB = 0 IE

MMBR5179LT1 Distributors

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MICROWAVE TRANSISTORS Microsemi
Microsemi MMBR5179LT1-like datasheet